如今，新的功率開關(guān)技術(shù)正被廣泛應(yīng)用于要求高功率密度、高開關(guān)頻率和小尺寸是關(guān)鍵要求的苛刻應(yīng)用中。這些新開關(guān)器件發(fā)揮作用的三個(gè)關(guān)鍵應(yīng)用是：?

汽車（牽引逆變器、DC/DC 轉(zhuǎn)換器和車載充電器）?

工業(yè)/電機(jī)控制（負(fù)載點(diǎn)電源、不間斷電源、機(jī)器人、電機(jī)控制）?

電源/太陽能（太陽能逆變器、電信電源、服務(wù)器/云/PC電源）?

功率開關(guān)要么使用傳統(tǒng)的硅基技術(shù)制造，例如MOSFET和絕緣柵雙極晶體管 (IGBT)，要么使用更新的寬帶隙半導(dǎo)體制造，例如碳化硅和氮化鎵。在相關(guān)應(yīng)用中，汽車是近年來發(fā)展勢頭強(qiáng)勁的領(lǐng)域，主要是由于正在向電動(dòng)汽車過渡以及電動(dòng)汽車的逐步采用。?

如圖 1 所示，電動(dòng)汽車集成了大量傳感器和電子電路，包括高壓總線（400 V、800 V 或更高）和本地低壓總線。SiC 器件正在取代高壓系統(tǒng)中的硅基器件，例如車載充電器、電池管理系統(tǒng)、主 DC/DC 轉(zhuǎn)換器和牽引逆變器。?

圖 1：電動(dòng)汽車系統(tǒng)中的開關(guān)技術(shù)?

高壓母線存在嚴(yán)重的安全問題，它必須與低壓母線電隔離，同時(shí)仍允許在兩個(gè)電壓域之間雙向交換信息。?

Skyworks 隔離柵極驅(qū)動(dòng)器

Skyworks Solutions 是一家為無線網(wǎng)絡(luò)應(yīng)用提供高度創(chuàng)新的模擬半導(dǎo)體的領(lǐng)先公司，最近完成了對 Silicon Labs 基礎(chǔ)設(shè)施和汽車業(yè)務(wù)的收購。針對包括電動(dòng)汽車和混合動(dòng)力汽車在內(nèi)的關(guān)鍵汽車領(lǐng)域的增長，Skyworks 為硅、GaN 和 SiC 電源開關(guān)提供高性能和強(qiáng)大的隔離式柵極驅(qū)動(dòng)器。?

Skyworks Solutions 產(chǎn)品經(jīng)理 Charlie Ice 在 2021 年 PowerUP Expo 上舉行了關(guān)于“驅(qū)動(dòng)和保護(hù)未來的電源開關(guān)”的技術(shù)演講，討論了硅基和寬帶隙功率器件的關(guān)鍵柵極驅(qū)動(dòng)器要求和保護(hù)方法. 本文將介紹相同的主題。?

“特別是在電動(dòng)汽車中，我們必須確保高壓側(cè)和低壓側(cè)保持隔離，同時(shí)確保它們?nèi)匀豢梢酝ㄟ^該屏障進(jìn)行通信和信息交換，”查理說。?

隔離器件的特性對于 SiC 和 GaN 等新的開關(guān)技術(shù)更為重要，它們可以實(shí)現(xiàn)更高的效率，但更敏感，更容易損壞。因此，這些新的開關(guān)技術(shù)需要獨(dú)特的保護(hù)才能安全可靠地運(yùn)行。?

傳統(tǒng)上，電力電子系統(tǒng)依賴于 IGBT，這是在高功率和高電壓條件下每瓦成本最低的解決方案。然而，IGBT 的開關(guān)速度較慢，從而限制了系統(tǒng)的效率。這就是 SiC 和 GaN 都介入以真正推動(dòng)更高效率的地方。兩者的一個(gè)缺點(diǎn)是它們不能像 IGBT 那樣承受盡可能多的故障條件，這就是它們需要額外保護(hù)的原因。?

在高壓系統(tǒng)中，為了安全起見，我們必須將高壓側(cè)與低壓側(cè)分開。通常，設(shè)計(jì)人員決定將控制器保持在低壓側(cè)，以便遠(yuǎn)離噪聲和大瞬態(tài)?？刂破魃擅}寬調(diào)制 (PWM) 信號，并將它們穿過隔離柵傳遞到柵極驅(qū)動(dòng)器，該驅(qū)動(dòng)器基本上將低壓 PWM 信號放大為能夠打開和關(guān)閉功率器件的更高信號。?

隔離式柵極驅(qū)動(dòng)器執(zhí)行的兩個(gè)主要功能是將 3V 或 5V 信號電平轉(zhuǎn)換到 24V 或 30V 的較高電壓軌，并提供開關(guān)電流以對柵極電容器進(jìn)行充電/放電。通過添加電流隔離屏障，該器件實(shí)現(xiàn)了兩個(gè)主要優(yōu)點(diǎn)：?

It provides input-to-output isolation for protection of the controller, and perhaps personnel, from high voltages and voltage transients.?

It helps to maintain noise-immune operation for best efficiency. High-voltage transients can disrupt operation, resulting in loss of modulation and thus efficiency.?

The isolated gate driver can be safely used to switch even high-power switches, such as silicon or superjunction MOSFETs, IGBTs, and wide-bandgap switches like GaN and SiC. Isolated gate drivers are available in many flavors: single-channel, dual-channel, and ones that can generate a high-side and a low-side signal from a single PWM input.?

“I typically find that many automotive systems use single-channel drivers because they make the board-layer layout easier; however, dual-channel drivers and high-side/low-side drivers are very popular in power supply systems,” said Charlie.?

Regarding protection, one of the key methods is the Miller clamp. Its function is to monitor the voltage on the gate, and if it gets too high, it clamps it. Basically, it’s an active monitor to ensure the gate is always off. However, Miller clamp protection is not enough for SiC and GaN power devices, which are more sensitive and get damaged more quickly. The other feature we need to add for driving SiC or GaN devices, improving their protection and longevity, is desaturation detection and soft shutdown.?

In a high-power system, such as a traction inverter, it’s not uncommon that power devices experience a momentary overcurrent condition. In this case, an isolated gate driver with desat detection can monitor the voltage (VCE) across the power switch. If it detects too much voltage across it (see Figure 2), which would indicate a fault condition, it automatically shuts it off in a very safe way, also known as soft shutdown. However, it is important to set the device off quickly enough to avoid being damaged. Here, we can see how switching devices behave differently. An IGBT, for instance, needs to be turned off within 3 μs, while a SiC device needs to be shut down within 1.2 μs and a GaN device within 200 ns.?

Figure 2: Desaturation protection with fault indication?

“這兩項(xiàng)關(guān)鍵技術(shù)——米勒鉗位和去飽和檢測——對于成功驅(qū)動(dòng) SiC 和 GaN 以及使系統(tǒng)可靠并且在許多方面安全，已經(jīng)變得非常關(guān)鍵，”Charlie 說。?

審核編輯：劉清