與drganplus簡(jiǎn)化設(shè)計(jì)

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　　本文將針對(duì)伊根FET模塊作為功率轉(zhuǎn)換系統(tǒng)設(shè)計(jì)者很容易地評(píng)估氮化鎵晶體管的特殊性能的途徑。

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　　簡(jiǎn)化設(shè)計(jì)

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　　電源轉(zhuǎn)換器不斷朝著更高的輸出功率，更高的效率，更高的功率密度，更高的溫度操作，更高的可靠性，同時(shí)提供了一個(gè)簡(jiǎn)單的解決方案的設(shè)計(jì)師。的drganplus，圖1所示，顯示了伊根FET的高功率密度的能力在一個(gè)易于使用的積木。占地面積占用更少的房地產(chǎn)比美國(guó)便士，優(yōu)化半橋設(shè)計(jì)開發(fā)的11毫米×12毫米的四層印刷電路板（PCB）與安裝墊允許連接到任何現(xiàn)有的轉(zhuǎn)換器。

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　　The block diagram of the half-bridge circuit design， shown in Figure 2， consists of two eGaN FETs， a driver integrated circuit （IC）， pulse width modulation （PWM） logic， dead-time adjust， and high-frequency input capacitors. The design and layout of these components is critical to fully utilize the high-speed capability of the eGaN FET technology. The DrGaNPLUS gate-drive circuitry ensures the gate-drive requirements for eGaN FETs are met and provides optimized performance with the latest GaN driver IC technology. Users can input two PWM signals to individually control the devices or use the on board logic and dead-time adjust circuit to input a single PWM signal and obtain an optimized dead-time for a buck converter application to maximize performance. The high-frequency input capacitors， also located on board， are arranged with the two eGaN FETs in an optimized PCB layout， minimizing the common source inductance and the high-frequency power commutation loop inductance to decrease switching losses and voltage overshoot. The DrGaNPLUS eliminates complexity and provides the designer an easy-to-use optimized solution with available pads to mount to the PCB， shown on the right in Figure 1.

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