一個更好的方式在LED背光管理漏電流故障

　　一個標準的方式來配置一個背光是使用兩個分立器件：100 V MOSFET在DPAK封裝和100 V肖特基二極管，也在采用DPAK封裝。肖特基二極管的高漏電流可能是在LED背光單元，特別是在較高的溫度下的問題。一些客戶在大規(guī)模生產(chǎn)過程中經(jīng)歷了肖特基二極管的泄漏故障問題。提高泄漏故障的一種方法是增加肖特基二極管的電壓等級從100 V至120 V，但泄漏電流仍然可以是一個問題時，系統(tǒng)溫度高。

　　我們的設計團隊開發(fā)了一種替代的方法，利用飛兆半導體的新的100 V boostpak溶液。BoostPak家族（圖1）使用一個單一的包家兩設備：100 V和150 V NP二極管的MOSFET。

　　Figure 1： The BoostPak combines a 100 V MOSFET and a 150 V NP diode into one package.

　　The BoostPak family is housed in a single 5-lead DPAK package. The N-channel MOSFET has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is a hyperfast rectifier with low forward voltage drop and excellent switching performance. It has a much lower leakage current than a Schottky diode， so it delivers better system reliability in high-temperature applications.

　　Compared to the two-discrete solution， the BoostPak approach uses a smaller footprint and can save as much as 20 mm2 of PCB space. Using one package instead of two also means there is less assembly work and lower system cost.