AEC-Q100認(rèn)證試驗
廣電計量失效分析實驗室AEC-Q技術(shù)團(tuán)隊，執(zhí)行過大量的AEC-Q測試案例，積累了豐富的認(rèn)證試驗經(jīng)驗，可為您提供更專業(yè)、更可靠的AEC-Q認(rèn)證試驗服務(wù)。
服務(wù)背景
IC作為重要的車載元器件部件，是AEC委員會持續(xù)關(guān)注的重點領(lǐng)域。AEC-Q100對IC的可靠性測試可細(xì)分為加速環(huán)境應(yīng)力可靠性、加速壽命模擬可靠性、封裝可靠性、晶圓制程可靠性、電學(xué)參數(shù)驗證、缺陷篩查、包裝完整性試驗，且需要根據(jù)器件所能承受的溫度等級選擇測試條件。需要注意的是，第三方難以獨立完成AEC-Q100的驗證，需要晶圓供應(yīng)商、封測廠配合完成，這更加考驗對認(rèn)證試驗的整體把控能力。廣電計量將根據(jù)客戶的要求，依據(jù)標(biāo)準(zhǔn)對客戶的IC進(jìn)行評估，出具合理的認(rèn)證方案，從而助力IC的可靠性認(rèn)證。
廣電計量失效分析實驗室AEC-Q技術(shù)團(tuán)隊，執(zhí)行過大量的AEC-Q測試案例，積累了豐富的認(rèn)證試驗經(jīng)驗，可為您提供更專業(yè)、更可靠的AEC-Q認(rèn)證試驗服務(wù)。
產(chǎn)品范圍
集成電路(IC)
測試周期
3-4個月，提供全面的認(rèn)證計劃、測試等服務(wù)
測試項目
| 序號 | 測試項目 | 縮寫 | 樣品數(shù)/批 | 批數(shù) | 測試方法 |
| A組 加速環(huán)境應(yīng)力試驗 | |||||
| A1 | Preconditioning | PC | 77 | 3 | J-STD-020、 |
| JESD22-A113 | |||||
| A2 | Temperature-Humidity-Bias | THB | 77 | 3 | JESD22-A101 |
| Biased HAST | HAST | JESD22-A110 | |||
| A3 | Autoclave | AC | 77 | 3 | JESD22-A102 |
| Unbiased HAST | UHST | JESD22-A118 | |||
| Temperature-Humidity (without Bias) | TH | JESD22-A101 | |||
| A4 | Temperature Cycling | TC | 77 | 3 | JESD22-A104、Appendix 3 |
| A5 | Power Temperature Cycling | PTC | 45 | 1 | JESD22-A105 |
| A6 | High Temperature Storage Life | HSTL | 45 | 1 | JESD22-A103 |
| B組 加速壽命模擬試驗 | |||||
| B1 | High Temperature Operating Life | HTOL | 77 | 3 | JESD22-A108 |
| B2 | Early Life Failure Rate | ELFR | 800 | 3 | AEC-Q100-008 |
| B3 | NVM Endurance, Data Retention, and Operational Life | EDR | 77 | 3 | AEC-Q100-005 |
| C組 封裝完整性測試 | |||||
| C1 | Wire Bond Shear | WBS | 最少5個器件中的30根鍵合線 | AEC-Q100-001、AEC-Q003 | |
| C2 | Wire Bond Pull | WBP | MIL-STD883 method 2011、 | ||
| AEC-Q003 | |||||
| C3 | Solderability | SD | 15 | 1 | JESD22-B102或 J-STD-002D |
| C4 | Physical Dimensions | PD | 10 | 3 | JESD22-B100、 JESD22-B108 |
| AEC-Q003 | |||||
| C5 | Solder Ball Shear | SBS | 至少10個器件的5個鍵合球 | 3 | AEC-Q100-010、 |
| AEC-Q003 | |||||
| C6 | Lead Integrity | LI | 至少5個器件的10根引線 | 1 | JESD22-B105 |
| D組 晶圓制造可靠性測試 | |||||
| D1 | Electromigration | EM | / | / | / |
| D2 | Time Dependent Dielectric Breakdown | TDDB | / | / | / |
| D3 | Hot Carrier Injection | HCI | / | / | / |
| D4 | Negative Bias Temperature Instability | NBTI | / | / | / |
| D5 | Stress Migration | SM | / | / | / |
| E組 電學(xué)驗證測試 | |||||
| E1 | Pre- and Post-Stress Function/Parameter | TEST | 所有要求做電學(xué)測試的應(yīng)力試驗的全部樣品 | 供應(yīng)商或用戶規(guī)格 | |
| E2 | Electrostatic Discharge Human Body Model | HBM | 參考測試規(guī)范 | 1 | AEC-Q100-002 |
| E3 | Electrostatic Discharge Charged Device Model | CDM | 參考測試規(guī)范 | 1 | AEC-Q100-011 |
| E4 | Latch-Up | LU | 6 | 1 | AEC-Q100-004 |
| E5 | Electrical Distributions | ED | 30 | 3 | AEC Q100-009 |
| AEC Q003 | |||||
| E6 | Fault Grading | FG | - | - | AEC-Q100-007 |
| E7 | Characterization | CHAR | - | - | AEC-Q003 |
| E9 | Electromagnetic Compatibility | EMC | 1 | 1 | SAE J1752/3-輻射 |
| E10 | Short Circuit Characterization | SC | 10 | 3 | AEC-Q100-012 |
| E11 | Soft Error Rate | SER | 3 | 1 | JEDEC |
| 無加速：JESD89-1 | |||||
| 加速：JESD89-2或JESD89-3 | |||||
| E12 | Lead (Pb) Free | LF | 參考測試規(guī)范 | 參考測試規(guī)范 | AEC-Q005 |
| F組 缺陷篩選測試 | |||||
| F1 | Process Average Testing | PAT | / | / | AEC-Q001 |
| F2 | Statistical Bin/Yield Analysis | SBA | / | / | AEC-Q002 |
| G組 密封封裝完整性測試 | |||||
| G1 | Mechanical Shock | MS | 15 | 1 | JESD22-B104 |
| G2 | Variable Frequency Vibration | VFV | 15 | 1 | JESD22-B103 |
| G3 | Constant Acceleration | CA | 15 | 1 | MIL-STD883 Method 2001 |
| G4 | Gross/Fine Leak | GFL | 15 | 1 | MIL-STD883 Method 1014 |
| G5 | Package Drop | DROP | 5 | 1 | / |
| G6 | Lid Torque | LT | 5 | 1 | MIL-STD883 Method 2024 |
| G7 | Die Shear | DS | 5 | 1 | MIL-STD883 Method 2019 |
| G8 | Internal Water Vapor | IWV | 5 | 1 | MIL-STD883 Method 1018 |
